Structural investigations of silicon carbide films formed by fullerene carbonization of silicon

Surface and Coatings Technology

Volumn 122, Issue 2-3, 1999, Pages 101-107

  Volz, K ^a   Schreiber, S ^a   Zeitler, M ^a   Rauschenbach, B ^a   Stritzker, B ^a   Ensinger, W ^b  

^a UNIVERSITY OF AUGSBURG   (Germany)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

Carbonization; Fullerene; Silicon carbide; Structure; Thin films

Indexed keywords

EID: 0040949655     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(99)00250-9     Document Type: Article

References (14)

1. Morkoc H., Strite S., Gao G.B., Lin M.E., Sverdlov B., Burns M. J. Appl. Phys. 76:1994;1363.
2. Powell J.A., Matus L.G. Recent developments in SiC (USA). Harris G.L., Yang C.Y.W. Amorphous and Crystalline Silicon Carbide. 1988;Springer Verlag, Washington.
3. Verma A.R., Krishna P. Polymorphism and Polytypism in Crystals. 1966;Wiley, New York.
4. Ramsdell R.S. Am. Miner. 32:1947;64.
5. Nishino S., Powell J.A., Will H.A. Appl. Phys. Lett. 42:1983;5.
6. Wahab Q., Glass R.C., Ivanov I.P., Birch J., Sundgren J.E., Willander M. J. Appl. Phys. 74:1993;3.
7. Hamza A.V., Balooch M., Moalem M. Surf. Sci. 317:1994;L1129.
8. Henke S., Rauschenbach B., Stritzker B. MRS Symp. Proc. 359:1994;405.
9. Doolittle L.R. Nucl. Instrum. Meth. B. 9:1985;344.
10. Leavitt J.A., McIntyre L.C. Jr., Stoss P., Oder J.G., Ashbaugh M.D., Dezfouly-Arjomandy B., Yang Z.M., Lin Z. Nucl. Instrum. Meth. B. 40/41:1989;776.
11. Joint Committee for Powder Diffraction Standards, Powder Diffraction File, International Center for Diffraction Data, Park Lane, 1989.
12. Geier S., Hessmer R., Preckwinkel U., Schweitzer D., Schreck M., Rauschenbach B. J. Appl. Phys. 79:1996;1907.
13. Bechstedt F., Käckeli P., Zywietz A., Karch K., Adolph B., Tenelsen K., Furthmüller J. Phys. Status Solidi B. 202:1997;35.
14. K. Volz, S. Schreiber J.W. Gerlach, B. Rauschenbach, B. Stritzker, W. Assmann, W. Ensinger. Mat. Sci. Eng. A, in press.