CW 4-W Ka-band power amplifier utilizing MMIC multichip technology

IEEE Journal of Solid-State Circuits

Volumn 35, Issue 9, 2000, Pages 1293-1297

  Matsunaga, Kohji ^a   Miura, Ikuo ^a   Iwata, Naotaka ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; MULTICHIP MODULES; SEMICONDUCTING GALLIUM ARSENIDE;

CONTINUOUS WAVE (CW) OUTPUT POWER;

POWER AMPLIFIERS;

EID: 0034270359     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.868038     Document Type: Article

References (7)

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2. J. J. Komiak, W. Kong, P. C. Chao, and K. Nichols, "3-W Ka-band MMIC HPA and driver amplifier implemented in a fully selective 0.15-μ in power PHEMT process," in IEEE GaAs IC Symp. Tech., 1998, pp. 45-48.
3. R. G. Freitag, K. M. Renaldo, H. G. Henry, and J. E. Degenford, "MMIC amplifier chip sets for Ka-band communications applications," in IEEE GaAs IC Symp. Tech., 1998, pp. 241-246.
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6. J. J. Komiak, W. Kong, P. C. Chao, and K. Nichols, "Fully monolithic 4-W high-efficiency Ka-band power amplifier," in IEEE MTT-S Dig., 1999, pp. 947-950.
7. M. K. Siddiqui, A. K. Sharma, L. G. Callejo, and R. Lai, "A high-power broadband monolithic power amplifier for Ka-band ground terminals," in IEEE MTT-S Dig., 1999, pp. 951-954.