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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 9 B, 2000, Pages 5501-5504

Preparation of layer-structured CaBi2Ta2O9 ferroelectric thin films

(4) Kato, Kazumi a,b Suzuki, Kazuyuki a Nishizawa, Kaori a Miki, Takeshi a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CADMIUM COMPOUNDS; CRYSTAL ORIENTATION; CRYSTALLIZATION; DEPOSITION; ELECTRIC FIELD EFFECTS; ELECTROMAGNETIC WAVE POLARIZATION; FILM PREPARATION; HYSTERESIS; PASSIVATION; PEROVSKITE; PLATINUM;

CADMIUM BISMUTH TANTALATE FERROELECTRIC THIN FILM; COERCIVE ELECTRIC FIELD; POLARIZATION ELECTRIC FIELD HYSTERESIS LOOP; REMANENT POLARIZATION; TRIPLE ALKOXIDE;

FERROELECTRIC THIN FILMS;

EID: 0034262636 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.5501 Document Type: Article

Times cited : (14)

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