Preliminary study on electrical and optical properties of ZnO film grown by MOCVD

Rare Metals

Volumn 19, Issue 3, 2000, Pages 185-186

  Zhaochun, Zhang ^a   Baibiao, Huang ^a   Yongqin, Yu ^a   Deliang, Cui ^a   Xiaoyan, Qin ^a   Minhua, Jiang ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

MOCVD; Optical transmittance; Resistivity; ZnO

Indexed keywords

ELECTRIC PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; ZINC OXIDE;

OPTICAL TRANSMITTANCE; ZINC OXIDE FILM;

FILMS;

EID: 0034262265     PISSN: 10010521     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. Vispute R D.Talyansky V.Appl. Phys. Lett: ,1998,73:348.
2. Chen Y F. J. Cryit. Grouih, 1997,181:165.
3. JCPPS-Intemational Center for Diffraction Data, Powder Diffraction File, Sets 35 to 36,1601 Park Lane, Swarthmore, PA 19081-2389,1990,1048(36-1451)
4. Hagemark K J.Chacka L C. J. Solid State Chem. ,1975,15:261.
5. Pankove J I. Optoelectronic Process in Semiconductor .Translated by Liu Xiangna, Jiang Ruolian and He Yuliang.Nanjiang: Press of Nanjing University, 1992.104.