Magnetization reversal in mesoscopic Ni80Fe20 wires: A magnetic domain launching device

IEEE Transactions on Magnetics

Volumn 36, Issue 5 I, 2000, Pages 3018-3020

  Lee, W Y ^a   Hirohata, A ^a   Leung, H T ^a   Xu, Y B ^a   Gardiner, S M ^a   Yao, C C ^a   Bland, J A C ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Magnetization reversal; Mesoscopic wires; Nucleation process; Switching field

Indexed keywords

KERR MAGNETOOPTICAL EFFECT; MAGNETIC DOMAINS; MAGNETIZATION; MICROSCOPIC EXAMINATION; NICKEL ALLOYS; NUCLEATION;

MAGNETIC FORCE MICROSCOPY (MFM); MAGNETIZATION REVERSAL; MESOSCOPIC WIRES; SCANNING KERR MICROSCOPY;

ELECTRIC WIRE;

EID: 0034260735     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.908661     Document Type: Article

References (14)

1. Domain observation on magnetoresistive sensor elements
2. Switching fields and magnetostatic interaction of thin film magnetic nanoelements
3. End domain state and magnetization reversal in submicron magnetic structures
4. 20 wires
5. Shape effect on magnetoresistance and magnetization reversal in permalloy wires
6. Domain wall trapping probed by MR and MFM in submicron ferromagnetic wire structures
7. Effect of junction geometry on switching field and reversal behaviorf in permalloy wires
8. Magnetization reversal and magnetoresistance in a lateral spin injection device
9. Spin injection and the ocal Hall effect in InAs quantum wells
10. Two-dimensional bloch-type domain walls in ferromagnetic films
11. 20 wire junctions
12. Injection of a magnetic domain wall into a submicron magnetic wire
13. Magnetoresistance of constricted ferromagnetic wires
14. Domain wall trapping in controlled submicron ferromagnetic elements