Elemental composition and electrical properties of (a-C:H):Cu films prepared by magnetron sputtering

Semiconductors

Volumn 34, Issue 9, 2000, Pages 1094-1099

  Zvonareva, T K ^a   Lebedev, V M ^b   Polyanskaya, T A ^a   Sharonova, L V ^a   Ivanov Omskii, V I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b Konstantinov Inst of Nucl Physics   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034258984     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1309430     Document Type: Article

References (20)

1. T. Cabioc'h, A. Naudon, M. Jaouen, et al., Philos. Mag. 79(3), 501 (1999).
2. J. Jiao and S. Seraphin, J. Appl. Phys. 83 (5), 2442 (1998).
3. V. I. Ivanov-Omskiǐ, A. B. Lodygin, and S. G. Yastrehov, Fiz. Tverd. Tela (St. Petersburg) 37 (6), 1693 (1995) [Phys. Solid State 37, 920 (1995)].
4. V. I. Ivanov-Omskiǐ, A. B. Lodygin, and S. G. Yastrehov, Fiz. Tverd. Tela (St. Petersburg) 37 (6), 1693 (1995) [Phys. Solid State 37, 920 (1995)].
5. V. I. Ivanov-Omskiǐ, A. B. Lodygin, and S. G. Yastrebov, Mol. Mater. 8, 95 (1996).
6. V. I. Ivanov-Omskiǐ, A. I. Tolmatchev, and S. G. Yastrebov, Philos. Mag. B 73, 715 (1996).
7. V. I. Ivanov-Omskiǐ, V. I. Siklitskiǐ, anil S. G. Yastrebov, Fiz. Tverd. Tela (St. Petersburg) 40 (3), 568 (1998) [Phys. Solid State 40, 524 (1998)].
8. V. I. Ivanov-Omskiǐ, V. I. Siklitskiǐ, anil S. G. Yastrebov, Fiz. Tverd. Tela (St. Petersburg) 40 (3), 568 (1998) [Phys. Solid State 40, 524 (1998)].
9. A. V. Kolobov, H. Oyanagi, S. G. Yastrebov, et al., J. Surf. Anal. 4 (2), 377 (1998).
10. V. I. Ivanov-Omskiǐ and É. A. Smorgonskaya, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32 (8), 931 (1998) [Semiconductors 32, 831 (1998)].
11. V. I. Ivanov-Omskiǐ and É. A. Smorgonskaya, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32 (8), 931 (1998) [Semiconductors 32, 831 (1998)].
12. T. K. Zvonareva, V. I. Ivanov-Omskiǐ, A. V. Nashchekin, and L. V. Sharonova, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34 (1), 96 (2000) [Semiconductors 34, 98 (2000)].
13. T. K. Zvonareva, V. I. Ivanov-Omskiǐ, A. V. Nashchekin, and L. V. Sharonova, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34 (1), 96 (2000) [Semiconductors 34, 98 (2000)].
14. Ion Beam Handbook for Material Analysis, Ed. by J. M. Mayer and E. Rimini (Academic, New York, 1977).
15. V. M. Lebedev and V. A. Smolin, 1994-1995 PNPI Research Report (Gatchina, 1996), p. 296.
16. F. Jansen, M. Machonkin, S. Kaplan, and S. Hark, J. Vac. Sci. Technol. A 3 (3), 605 (1985).
17. B. I. Shklovskiǐ and A. L. Éfros, Electronic Properties of Doped Semiconductors (Nauka, Moscow, 1979; Springer-Verlag, New York, 1984).
18. D. Kember and N. Sheppard, Appl. Spectrosc. 29 (6), 496 (1975).
19. A. O. Golubok, O. M. Gorbenko, T. K. Zvonareva, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34 (2), 223 (2000) [Semiconductors 34, 217 (2000)].
20. A. O. Golubok, O. M. Gorbenko, T. K. Zvonareva, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34 (2), 223 (2000) [Semiconductors 34, 217 (2000)].