A computationally efficient method for three-dimensional simulation of ion implantation

IEICE Transactions on Electronics

Volumn E83-C, Issue 8, 2000, Pages 1259-1265

  Burenkov, Alexander ^a,b   Tietzei, Klaus ^a   Hössinger, Andreas ^a   Lorenzt, Jürgen ^a   Rysselt, Heiner ^a   Selberherr, Siegfried ^a  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

Analytical, simulation; Ion implantation; Monte carlo; Three dimensional

Indexed keywords

ALGORITHMS; COMPUTATIONAL METHODS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; RESPONSE TIME (COMPUTER SYSTEMS);

CENTRAL PROCESSING UNIT; MONTE CARLO ION IMPLANTATION METHODS;

ION IMPLANTATION;

EID: 0034251028     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. References [1] S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer Verlag, Vienna, 1984.
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3. J. Lorenz, E. Bär, A. Burenkov, W. Henke, K. Tietzcl, and M. Weiss, "3D simulation of topography and doping processes at FhG," in 3-Dimensional Process Simulation, ed. J. Lorenz, pp.109-135, Springer-Verlag, Wien, New York, 1995.
4. J. Lorenz, K. Tietzel, A. Burenkov, and H. Ryssel, "Threedimensional simulation of ion implantation," 1996 Int. Conf. on Simulation of Semiconductor Processes and Devices, pp.23-24, Toyo University, Tokyo, Japan, 199G.
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7. W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, and S. Selberherr, "Trajectory split method for Monte-Carlo simulation of ion implantation," IEEE Trans. Semicon. Manufacturing, vol.8, no.4, pp.402-407, Aug. 1995.
8. H. Ryssel, J. Lorenz, and K. Hoffmann, "Models for ion implantation into multilayer targets", J. Appl. Phys., vol.A41, pp.201-207, 1986.
9. D.K. Brice, "Ion implantation distributions in inhomogeneous materials," Nucl. lustrum, and Mcth., vol.B.17, pp.289-299, 1986.