Electronic structure of α and γ phases of Si(111)-√3×√3-Sn

Applied Surface Science

Volumn 162, Issue , 2000, Pages 375-379

  Charrier, A ^a   Themlin, J M ^a   Thibaudau, F ^a   Forbeaux, I ^a   Debever, J M ^a  

^a AIX MARSEILLE UNIVERSITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; FERMI LEVEL; PHASE COMPOSITION; PHOTOEMISSION; SEMICONDUCTING SILICON; SURFACE PHENOMENA; TIN;

ADATOMS; INVERSE PHOTOEMISSION; SURFACE BRILLOUIN ZONE (SBZ); SURFACE RECONSTRUCTION;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0034247929     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00218-X     Document Type: Article

References (10)

1. Törnevik C., Göthelid M., Hammar M., Karlsson U.O., Nilsson N.G., Flodström S.A., Wigren C., Östling M. Surf. Sci. 314:1994;179.
2. Göthelid M., Björkqvist M., Grehk T.M., Le Lay G., Karlsson U.O. Phys. Rev. B. 52:1995;R14352.
3. Avila J., Mascaraque A., Michel E.G., Asensio M.-C., Le Lay G., Ortega J., Pérez R., Florés F. Phys. Rev. Lett. 82:1999;442.
4. Bouzidi S., Coletti F., Debever J.-M., Thiry P.A., Dumas P., Chabal Y. Phys. Rev. B. 45:1992;1187.
5. Kinoshita T., Ohta H., Enta Y., Yaegashi Y., Suzuki S., Kono S. J. Phys. Soc. Jpn. 56:1987;4015.
6. Kinoshita T., Kono S., Sagawa T. Phys. Rev. B. 34:1986;3011.
7. Lin X.F., Chizhov I., Mai H.A., Willis R.F. Surf. Sci. 366:1996;51.
8. Nogami J., Park S., Quate C.F. J. Vac. Sci. Technol., A. 7:1989;1919.
9. Anyele H.T., Griffiths C.L., Caffola A.A., Matthai C.C., Williams R.H. Appl. Surf. Sci. 123/124:1998;480.
10. Le Lay G., Janski J., Nilsson P.O., Karlsson U.O. Appl. Surf. Sci. 56/58:1992;178.