Macrostep and mound formation during AlGaAs growth on vicinal GaAs(110) studied by scanning tunneling microscopy

Applied Surface Science

Volumn 162, Issue , 2000, Pages 430-434

  Hasegawa, Shigehiko ^a   Arakawa, Katsuhito ^a   Oooka, Hiroki ^a   Nakashima, Hisao ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SUPERLATTICES;

ALUMINUM GALLIUM ARSENIDE; VICINAL SURFACE;

SEMICONDUCTOR GROWTH;

EID: 0034247673     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00228-2     Document Type: Article

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