SCOPUS 정보 검색 플랫폼

Volumn 175-176, Issue PART 2, 1997, Pages 1075-1080

Growth parameter dependence of step patterns in AlGaAs molecular beam epitaxy on vicinal GaAs(1 1 0) inclined toward (1 1 1)A

(4) Hasegawa, Shigehiko a Sato, Kazuki a Torii, Satoshi a Nakashima, Hisao a

a OSAKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ATOMIC FORCE MICROSCOPY; DIFFUSION IN SOLIDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM ARSENIDE; GROWTH PARAMETER DEPENDENCE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0031144254 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00929-3 Document Type: Article

Times cited : (6)

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