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Journal of the Electrochemical Society

Volumn 147, Issue 8, 2000, Pages 3091-3093

Characterization of sub-30 nm p+/n junction formed by plasma ion implantation

(6) Baek, S K a Choi, C J a Seong, T Y a Hwang, H a Kim, H K b Moon, D W b

a Gwangju Institute of Science and Technology (GIST) (South Korea)

b Korea Research Institute of Standards and Science (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION IN SOLIDS; ION IMPLANTATION; MOSFET DEVICES; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING; SEMICONDUCTOR PLASMAS; TRANSMISSION ELECTRON MICROSCOPY;

BORON ENHANCED DIFFUSION (BED); PLASMA ION IMPLANTATION; TRANSIENT-ENHANCED DIFFUSION (TED);

SEMICONDUCTOR JUNCTIONS;

EID: 0034246468 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1393861 Document Type: Article

Times cited : (6)

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