Scanning tunneling spectroscopy of Si6H12 clusters deposited on Si(111)-(7×7) surfaces

Surface Science

Volumn 462, Issue 1, 2000, Pages 85-89

  Bolotov, L ^a   Uchida, N ^b   Kanayama, T ^b,c  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b JRCAT   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CHEMICAL BONDS; CRYSTAL ORIENTATION; DEPOSITION; ELECTRONIC PROPERTIES; ENERGY GAP; HYDROGENATION; KINETIC ENERGY; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE PHENOMENA; SURFACE STRUCTURE;

SCANNING TUNNELING SPECTROSCOPY;

SILICON COMPOUNDS;

EID: 0034245063     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00568-9     Document Type: Article

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