Calculation of exciton absorption in arbitrary layered semiconductor nanostructures with exact treatment of the Coulomb singularity

IEEE Journal of Quantum Electronics

Volumn 36, Issue 7, 2000, Pages 842-848

  Ahland, Andreas ^a   Wiedenhaus, Marco ^a   Schulz, Dirk ^a,b   Voges, Edgar ^a,c,d,e  

^a TU DORTMUND UNIVERSITY   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^d UNIVERSITY OF HAGEN   (Germany)

^e Inst for High Frequency Techniques

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB SINGULARITY; DENSITY MATRIX FORMALISM; ELECTROABSORPTION; EXCITON ABSORPTION; FRANZ-KELDYSH EFFECT; SEMICONDUCTOR NANOSTRUCTURE;

BOUNDARY CONDITIONS; EIGENVALUES AND EIGENFUNCTIONS; EXCITONS; FINITE ELEMENT METHOD; LIGHT ABSORPTION; NANOTECHNOLOGY; OPTICAL PROPERTIES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0034228286     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.848357     Document Type: Article

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