Nonradiative carrier recombination centers of Cl-doped ZnSe epitaxial layers

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 201-205

  Yoshino, K ^a   Mikami, H ^a   Yoneta, M ^b   Saito, H ^b   Ohishi, M ^b   Ikari, T ^a  

^a UNIVERSITY OF MIYAZAKI   (Japan)

^b OKAYAMA UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHARGE CARRIERS; CHLORINE; CRYSTAL DEFECTS; EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOACOUSTIC SPECTROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING;

EPITAXIAL LAYER; NONRADIATIVE CARRIER RECOMBINATION CENTER; PHOTOLUMINESCENCE SPECTROSCOPY; PHOTOTHERMAL SPECTROSCOPY; ZINC SELENIDE;

SEMICONDUCTING FILMS;

EID: 0034228095     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180:1<201::AID-PSSA201>3.0.CO;2-Q     Document Type: Article

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