Effect of compressive strain on the performance of p-type quantum well infrared photodetectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2999, Issue , 1997, Pages 132-143

  Li, Sheng S ^a   Chu, Jerome T ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIBILITY; DOPING (ADDITIVES); FABRICATION; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

COMPRESSIVE STRAIN; FOCAL PLANE ARRAYS; INTERSUBBAND TRANSITIONS;

INFRARED DETECTORS;

EID: 0031356621     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (24)