Work function of scratched silicon surface during O2 and N2 adsorption

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4509-4511

  Nakayama, Keiji ^a   Zhang, Lulu ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Contact potential difference; Kelvin probe force microscope; Nitrogen; Oxygen; Silicon; Ultrahigh vacuum; Work function

Indexed keywords

ADSORPTION; EXPOSURE CONTROLS; FUNCTION EVALUATION; NITROGEN; OXYGEN; SCANNING ELECTRON MICROSCOPY; UHV POWER TRANSMISSION;

CONTACT POTENTIAL DIFFERENCE; NITROGEN; OXYGEN; SCANNIN KELVIN PROBE FORCE MICROSCOPY; SCRATCHED SILICON SURFACE; WORK FUNCTION;

SILICON;

EID: 0034227391     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4509     Document Type: Article

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