Oxidation of sintered silicon carbide under microwave-induced CO2 plasma at high temperature: Active-passive transition

Applied Surface Science

Volumn 161, Issue 3, 2000, Pages 434-442

  Balat, M ^a   Berjoan, R ^a  

^a Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DIOXIDE; CARBON MONOXIDE; DISSOCIATION; MICROWAVES; MORPHOLOGY; PHASE TRANSITIONS; PRESSURE EFFECTS; REDOX REACTIONS; SCANNING ELECTRON MICROSCOPY; SINTERING; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

MICROWAVE DISSOCIATION;

SILICON CARBIDE;

EID: 0034226102     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00314-7     Document Type: Article

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