Low-temperature preparation of SrxBi2+yTa2O9 ferroelectric thin film by pulsed laser deposition and its application to a metal-ferroelectric-nitride-oxide-semiconductor structure

Applied Physics A: Materials Science and Processing

Volumn 71, Issue 1, 2000, Pages 113-116

  Noda, M ^a   Adachi, Y ^a   Sugiyama, H ^a   Nakaiso, T ^a   Okuyama, M ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; FERROELECTRIC MATERIALS; HYSTERESIS; LOW TEMPERATURE EFFECTS; PERMITTIVITY; PULSED LASER APPLICATIONS; SEMICONDUCTING SILICON; SILICA; SILICON NITRIDE; STRONTIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

CAPACITANCE VOLTAGE HYSTERESIS; FERROELECTRIC THIN FILM; LOW TEMPERATURE PREPARATION; METAL FERROELECTRIC NITRIDE OXIDE SEMICONDUCTOR STRUCTURE;

THIN FILMS;

EID: 0034225111     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

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