BeCdSe/(Be,Zn)Se quantum well as a new active region for blue-green II-VI lasers and light-emitting diodes

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 275-280

  Ivanov, S V ^a,b   Toropov, A A ^a   Shubina, T V ^a   Sorokin, S V ^a,b   Nekrutkina, O V ^a   Kaygorodov, V A ^a   Kopev, P S ^a   Reuscher, G ^b   Keim, M ^b   Waag, A ^b   Landwehr, G ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; COMPOSITION; ENERGY GAP; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; X RAY DIFFRACTION ANALYSIS;

BERYLLIUM CADMIUM SELENIUM ALLOYS; LATTICE MATCHING; STRUCTURAL PROPERTIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034224633     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180:1<275::AID-PSSA275>3.0.CO;2-J     Document Type: Article

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