Porosity development of RuO2 filled glass thick films on aluminum nitride substrates at elevated temperatures

Journal of Materials Science: Materials in Electronics

Volumn 11, Issue 5, 2000, Pages 411-417

  Tseng, Wenjea J ^a   Tsai, Chir Jang ^b   Fu, Shen Li ^b  

^a CHINESE CULTURE UNIVERSITY   (Taiwan)

^b I SHOU UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; ALUMINUM COMPOUNDS; ARSENIC; CRYSTAL MICROSTRUCTURE; GLASS; INCLUSIONS; INTERFACES (MATERIALS); POROSITY; RUTHENIUM COMPOUNDS; SUBSTRATES; THERMOOXIDATION; THICK FILMS;

GAS FORMING TEMPERATURES;

POLYCRYSTALLINE MATERIALS;

EID: 0034217596     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008971321873     Document Type: Article

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