Tapered-cavity surface-emitting distributed-Bragg-reflector semiconductor lasers: modeling and experiment

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 6, Issue 4, 2000, Pages 594-600

  Luo, H ^a,b   Kasunic, K J ^c   Macomber, S H ^d   Bedford, R ^a   Moloney, J V ^c   Fallahi, M ^a  

^a UNIVERSITY OF ARIZONA   (United States)

^b ACT MicroDevices   (United States)

^c University of Arizona   (United States)

^d Opto Power Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; DIFFRACTION GRATINGS; LASER APPLICATIONS; LIGHT EMISSION; LIGHT REFLECTION; MIRRORS; NUMERICAL METHODS; PUMPING (LASER); SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DOPING;

DISTRIBUTED BRAGG REFLECTOR; ERBIUM DOPED FIBER AMPLIFIERS; GRATING COUPLED SURFACE EMITTING LASERS; MASTER OSCILLATOR POWER AMPLIFIERS; RAMAN AMPLIFIERS; TAPERED LASER;

SEMICONDUCTOR LASERS;

EID: 0034217283     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.883373     Document Type: Article

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