Reactive-ion-etched diffraction-limited unstable resonator semiconductor lasers

IEEE Journal of Quantum Electronics

Volumn 33, Issue 2, 1997, Pages 219-230

  Biellak, Stephen A ^a,b,c,e,f   Fanning, C Geoff ^b   Sun, Yan ^{b,d,f,g,h,i,j,k,l,m,n}   Wong, S Simon ^{b,f,o,p,q,r,s,t}   Siegman, Anthony E ^{b,f,t,u,v,w,x,y,z,aa}  

^a IEEE   (United States)

^b STANFORD UNIVERSITY   (United States)

^c KLA TENCOR CORPORATION   (United States)

^d NOKIA RESEARCH CENTER   (United States)

^e Department of Obstetrics Gynecology   (United States)

^f STANFORD UNIVERSITY   (United States)

^g SHANDONG NORMAL UNIVERSITY   (China)

^h UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

ⁱ Univeristy Electron Sci T

^j UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^k SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^l LUCENT TECHNOLOGIES   (United States)

^m Professor Anthony Siegman's Group   (France)

ⁿ OPTICAL SOCIETY OF AMERICA   (United States)

^o UNIVERSITY OF MINNESOTA   (United States)

^p UNIVERSITY OF CALIFORNIA   (United States)

^q NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^r HEWLETT PACKARD LABORATORIES   (United States)

^s Cornell University   (United States)

^t Cornell University ^*

^u HARVARD COLLEGE   (United States)

^v UNIVERSITY OF CALIFORNIA   (United States)

^w RAYTHEON COMPANY   (United States)

^x HARVARD UNIVERSITY   (United States)

^y IBM RESEARCH ZURICH   (Switzerland)

^z MAX PLANCK INSTITUT FÜR QUANTENOPTIK   (Germany)

^aa NATIONAL ACADEMY OF ENGINEERING   (United States)

more..

Author keywords

Laser modes; Laser resonators; Optical propagation; Plasma materials processing applications; Semiconductor device fabrication; Semiconductor lasers

Indexed keywords

ABERRATIONS; COMPUTER SIMULATION; LASER BEAMS; LASER MODES; LASER RESONATORS; LIGHT PROPAGATION; OPTICAL VARIABLES MEASUREMENT; PERFORMANCE; PLASMAS; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE;

BRIGHTNESS; LASER BEAM QUALITY;

SEMICONDUCTOR LASERS;

EID: 0031078265     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.552262     Document Type: Article

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