Optimization of PP- junction termination for new power devices

Solid-State Electronics

Volumn 39, Issue 4 SPEC. ISS., 1996, Pages 593-599

  Austin, P ^a   Sanchez, J L ^a   Berriane, R ^a  

^a LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC CHARGE; MOS DEVICES; OXIDES; TECHNOLOGY;

HIGH VOLTAGE POWER DEVICES; JUNCTION FERMINATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0030128002     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00192-1     Document Type: Article

References (17)

1. Y. C. Kao and E. D. Wolley, Proc. IEEE 55, 1409 (1967).
2. A. Rusu and C. Bulucea, IEEE Trans. Electron Devices ED-26, 201 (1976).
3. T. Matsushita, T. Aoki, T. Ohtsu, H. Yamato, H. Hayashi, M. Okayama and Y. Kawana, IEEE Trans. Electron Devices ED-23, 826 (1976).
4. J. Appels, M. G. Collet, P. A. H. Hart, H. M. J. Vaes and J. F. C. M. Verhoeven, Philips J. Res. 35, 1 (1980).
5. V. A. K. Temple and W. Tantraporn, IEEE Trans. Electron Devices ED-33, 1601 (1986).
6. R. Stengl, U. Gösele, C. Fellinger, M. Beyer and S. Walesch, IEEE Trans. Electron Devices ED-33, 426 (1986).
7. J. Korec and R. Held, IEEE Trans. Electron Devices ED-40, 1845 (1993).
8. F. A. Selim, IEEE Electron Device Lett. EDL-2, 219 (1981).
9. A. Mimura, M. Oohayashi, S. Murakami and N. Momma, IEEE Electron Device Lett. EDL-6, 189 (1985).
10. T. Stockmeier and K. Lilja, I.S.P.S.D., Los Angeles, pp. 145 (1991).
11. K. Hwang and D. H. Navon, IEEE Trans. Electron Devices ED-31, 1126 (1984).
12. R. Van Overstraeten and H. Deman, Solid-St. Electron. 13, 583 (1970).
13. M. Gharbi, Ph.D. thesis Université Paul Sabatier, Toulouse, France (1985).
14. W. Fulop, Solid-St. Electron. 10, 39 (1967).
15. S. M. Miller, Physical Rev. 105, 1246 (1957).
16. G. Charitat, A. Nezar, D. Jaume, J. L. Sanchez and P. Rossel, 7th NASECODE VII, Copper Mountain, U.S.A. (1991).
17. P. Leturcq, Fourth Brazilian Workshop on Microelectronics, p. 275 (1984).