Characterization of porous SiC by variable-energy positron beams

Radiation Physics and Chemistry

Volumn 58, Issue 5-6, 2000, Pages 621-624

  Hirata, K ^a   Monguchi, T ^b   Suzuki, R ^c   Ohdaira, T ^c   Kobayashi, Y ^a   Kumagai, T ^a   Tsunoda, T ^a   Hishita, S ^d   Mikado, T ^c   Fujioka, H ^b   Oshima, M ^b  

^a NATL INST OF MAT AND CHEM RES   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; ETHANOL; HYDROFLUORIC ACID; POROSITY; POROUS MATERIALS; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SILICON WAFERS; SUBSTRATES;

ELECTROCHEMICAL ANODIZATION; LIFETIME MEASUREMENTS; POROUS SILICON CARBIDE; POSITRON ANNIHILATION DOPPLER BROADENING; VARIABLE ENERGY POSITRON BEAMS;

POSITRONS;

ALCOHOL; SILICON CARBIDE;

CHEMICAL STRUCTURE; CONFERENCE PAPER; DEGRADATION; DESTRUCTION; ENERGY; LUMINESCENCE; PHYSICAL CHEMISTRY; POROSITY; POSITRON; RADIATION BEAM; STRUCTURE ANALYSIS;

EID: 0034214411     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0969-806X(00)00229-2     Document Type: Conference Paper

References (16)

1. Brauer G., Anwand W., Nicht E.-M., Kuriplach J., Sob M., Wagner N., Coleman P.G., Puska M.J., Korhonen T. Evaluation of some basic positron related characteristic of SiC. Phys. Rev. B54:1996;2512.
2. Fujinami M. Oxygen-related defects in Si studied by variable-energy positron annihilation spectroscopy. Phys. Rev. B53:1996;13047.
3. Kobayashi Y., Kojima I., Hishita S., Suzuki T., Asari E., Kitajima M. Damage-depth profiling of an ion-irradiated polymer by monoenergetic positron beams: Phys. Rev. B52:1995;823.
4. Krause-Rehberg R., Leipner H.S. Positron Annihilation in Semiconductors. 1999;Springer-Verlag, Berlin, Heidelberg.
5. Lathinen J., Vehanen A. Application of positron techniques to surface studies and catalysis. Catalysis Lett. 8:1991;67.
6. y. Phys. Rev. B22:1980;4143.
7. Matsumoto T., Takahashi J., Tamaki T., Futagi T., Kanemitsu Y. Blue-green luminescence from porous silicon carbide. Appl. Phys. Lett. 64:(2):1994;226.
8. Mills A.P. Jr, Wilson R.J. Transmission of 1-6 keV positrons through thin metal films. Phys. Rev. A26:1982;490.
9. Monguchi, T., Fujioka, H., Uragami, T., Ohuchi, H., Ono, K., Baba, Y., Oshima, M., 2000. X-ray absorption studies of anodized single crystalline 3C-SiC. J. Electrochem. Soc., 147(2), 741.
10. Myler U., Goldberg R.D., Knights A.P., Lawther D.W., Simpson P.J. Chemical information in positron annihilation spectra. Appl. Phys. Lett. 69:1996;3333.
11. Puff W., Boumerzoug M., Brown J., Mascher P., Macdonald D., Simpson P.J., Balogh A.G., Hahn H., Chang W., Rose M. An investigation of point defects in silicon carbide. Appl. Phys. A61:1995;55.
12. Stormer J., Goodyear A., Anwand W., Brauer G., Coleman P.G., Triftshauser W. Silicon carbide: a new positron moderator. J. Phys. Condens. Matter. 8:1996;L89.
13. Suzuki R., Kobayashi Y., Mikado T., Ohgaki H., Chiwaki M., Yamazaki T., Tomimasu T. Slow positron pulsing system for variable energy positron lifetime spectroscopy. Jpn. J. Appl. Phys., 30:1991;L532.
14. Suzuki R, Mikado T., Ohgaki H., Chiwaki M., Yamazaki T. Positron-lifetime study on porous silicon with a monoenergetic pulsed positron beam: Phys. Rev. B. 49:1994;17484.
15. Uedono A., Itoh H., Ohshima T., Suzuki R., Ohdaira T., Tanigawa S., Aoki Y., Yoshikawa M., Nashiyama I., Mikado T., Okumura H., Yoshida S. Annealing properties of defects in ion-implanted 3C-SiC studied using monoenergetic positron beams. Jpn. J. Appl. Phys., 36:1997;6650.
16. Vehanen A., Saarinen K., Hautojarvi P., Huomo H. Profiling multilayer structure with monoenergetic positrons. Phys. Rev. B35:1987;4606.