Preparation of size-quantized ZnS thin films using electrochemical atomic layer epitaxy and their photoelectrochemical properties

Langmuir

Volumn 16, Issue 13, 2000, Pages 5820-5824

  Torimoto, Tsukasa ^a   Obayashi, Atsushi ^a   Kuwabata, Susumu ^a   Yasuda, Hidehiro ^a   Mori, Hirotaro ^a   Yoneyama, Hiroshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTROCHEMISTRY; ELECTRON MICROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; ENERGY GAP; EPITAXIAL GROWTH; FILM PREPARATION; SCANNING TUNNELING MICROSCOPY; STOICHIOMETRY; THICKNESS MEASUREMENT; ZINC SULFIDE;

BAND GAP; ELECTROCHEMICAL ATOMIC LAYER EPITAXY; ELECTRON DONOR; PHOTOELECTROCHEMICAL PROPERTIES;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0034207316     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la000133y     Document Type: Article

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