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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 6 A, 2000, Pages 3308-3313

Reactive ion etching of ZnSe, ZnSSe, ZnCdSe and ZnMgSSe by H2/Ar and CH4/H2/Ar

(6) Chen, W R a Chang, S J a Su, Y K a Lan, W H b Lin, A C H b Chang, H b

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY (Taiwan)

Author keywords

Auger; Photoluminescence; RIE; SEM; ZnSe

Indexed keywords

ANISOTROPY; ANNEALING; ARGON; COMPOSITION EFFECTS; EMISSION SPECTROSCOPY; HYDROGEN; METHANE; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SURFACE ROUGHNESS; THERMAL EFFECTS;

ZINC CADMIUM SELENIDE; ZINC MAGNESIUM SULFUR SELENIDE; ZINC SELENIDE; ZINC SULFUR SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0034206672 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.3308 Document Type: Article

Times cited : (16)

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