Influence of interface bonds and buffer materials on optical properties of InAs/AlSb quantum wells grown on GaAs substrates

Applied Surface Science

Volumn 159, Issue , 2000, Pages 313-317

  Ohtani, K ^a   Sato, A ^a   Ohno, Y ^a   Matsukura, F ^a   Ohno, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; GRAIN BOUNDARIES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

INTERFACE BONDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034205918     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00106-9     Document Type: Article

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