Metal-induced solid-phase crystallization of hydrogenated amorphous silicon: dependence on metal type and annealing temperature

Applied Physics A: Materials Science and Processing

Volumn 70, Issue 5, 2000, Pages 587-590

  Wang, Y Z ^a,b   Awadelkarim, O O ^b  

^a Anadigics Inc   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHROMIUM; ELECTRIC CONDUCTIVITY OF SOLIDS; GRAIN SIZE AND SHAPE; HYDROGENATION; NICKEL; PALLADIUM; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; RECRYSTALLIZATION (METALLURGY); THERMAL EFFECTS;

POLYCRYSTALLINE SILICON; SOLID PHASE CRYSTALLIZATION;

AMORPHOUS SILICON;

EID: 0034187560     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390051084     Document Type: Article

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