Depth distribution of plasma induced damage and dislocation generation due to an interaction of subsequent oxidation

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 3, 2000, Pages 830-834

  Yamaguchi, T ^a   Sasaki, T ^a   Nikoh, H ^a   Ito, T ^b  

^a PANASONIC CORPORATION   (Japan)

^b Osaka Prefecture University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); DRY ETCHING; FLUOROCARBONS; HELIUM; LEAKAGE CURRENTS; OXIDATION; OXYGEN; RADIATION DAMAGE; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; STACKING FAULTS;

PLASMA DAMAGE; SELECTIVE OXIDATION;

PLASMA ETCHING;

EID: 0034187545     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582263     Document Type: Article

References (14)

1. N. Yabumoto, M. Oshima, O. Michikami, and S. Yoshii, Jpn. J. Appl. Phys. 20, 893 (1981).
2. A. S. Yapsir, G. Fortuño-Wiltshire, J. P. Gambino, R. Kastl, and C. Parks, J. Vac. Sci. Technol. A 8, 2939 (1990).
3. G. S. Oehrlein, J. G. Clabes, G. J. Coyle, J. C. Tsang, and Y. H. Lee, J. Vac. Sci. Technol. A 4, 750 (1986).
4. G. S. Oehrlein and Y. H. Lee, J. Vac. Sci. Technol. A 5, 1585 (1987).
5. T. Arikado and Y. Horiike, Jpn. J. Appl. Phys., Part 1 22, 799 (1983).
6. S. W. Pang, D. D. Rathman, D. J. Silversmith, R. W. Mountain, and P. D. DeGraff, J. Appl. Phys. 54, 3272 (1983).
7. K. Kurosawa, Y. Horiike, H. Okano, and K. Okamura, Proceedings of the 1980 Dry Process Symposium, Tokyo, Japan, 1980 (unpublished), p. 43.
8. T. Yamaguchi, T. Sasaki, and H. Nikoh, Proceedings of the First International Symposium on Plasma Process-Induced Damage, Santa Clara, CA, 1996 (unpublished), p. 198.
9. J. Gambino, M. Monkowski, J. Shepard, and Parks, J. Electrochem. Soc. 137, 976 (1990).
10. H. P. Strunk, H. Cerva, and E. G. Mohr, J. Electrochem. Soc. 135, 2876 (1988).
11. S. Hu, S. Klepner, R. Schwenker, and D. Seto, J. Appl. Phys. 47, 4098 (1976).
12. S. Isomae, Y. Tamaki, A. Yajima, M. Nanba, and M. Maki, J. Electrochem. Soc. 126, 1014 (1979).
13. J. Vanhellemont and S. Amelinckx, J. Appl. Phys. 61, 2170 (1987).
14. H. Cerva, E. G. Mohr, and H. Oppolzer, J. Vac. Sci. Technol. B 5, 590 (1987).