Schottky barrier formation at Cu/TiB2/TiSi2/Si interface

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1338-1342

  Pelleg, Joshua ^a  

^a BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; CURRENT VOLTAGE CHARACTERISTICS; HEAT TREATMENT; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SUBSTRATES; TITANIUM COMPOUNDS; VLSI CIRCUITS;

SILICIDATION; TITANIUM DIBORIDE; TITANIUM DISILICIDE;

HETEROJUNCTIONS;

EID: 0034187494     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591383     Document Type: Article

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