Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1623-1627

  Hasenberg, T C ^a   Day, P S ^b   Shaw, E M ^a   Magarrell, D J ^a   Olesberg, J T ^a   Yu, C ^a   Boggess, Thomas F ^a,b   Flatte M E ^a  

^a UNIVERSITY OF IOWA   (United States)

^b IA United States   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; INFRARED DEVICES; MOLECULAR BEAM EPITAXY; OPTICAL PARAMETRIC OSCILLATORS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

AUGER LIFETIMES; BROKEN-GAP SUPERLATTICE (BGSL) WELLS; MIDWAVE-INFRARED (MWIR) LASER DIODES; SHOCKLEY READ HALL (SRH) LIFETIMES;

SEMICONDUCTOR LASERS;

EID: 0034187383     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591440     Document Type: Article

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