Photoelectrochemical determination of the flatband potential of boron-doped diamond

Electrochemical and Solid-State Letters

Volumn 3, Issue 3, 2000, Pages 141-143

  Pleskov, Yu V ^a   Mazin, V M ^a   Evstefeeva, Yu E ^a   Varnin, V P ^b   Teremetskaya, I G ^b   Laptev, V A ^c  

^a FRUMKIN INSTITUTE OF PHYSICAL CHEMISTRY AND ELECTROCHEMISTRY   (Russian Federation)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^c All Russia Res Inst Synthesis M   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRODES; HIGH TEMPERATURE OPERATIONS; PHOTOCHEMICAL REACTIONS; PHOTOCURRENTS; POLYCRYSTALLINE MATERIALS; SINGLE CRYSTALS;

FLATBAND POTENTIALS; PHOTOELECTROCHEMICAL METHODS;

DIAMONDS;

EID: 0034159557     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390982     Document Type: Article

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