Electrical and optical changes in AlGaAs and InGaP during dielectric etching in ECR SF6 plasmas

Solid-State Electronics

Volumn 41, Issue 3, 1997, Pages 401-404

  Lee, K N ^a   Lee, J W ^a   Abernathy, C R ^a   Pearton, S J ^a   Hobson, W S ^b   Ren, F ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON CYCLOTRON RESONANCE; ION BOMBARDMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SILICA; SILICON NITRIDE;

DIELECTRIC ETCHING; PLASMA ETCHING;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0031096435     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)86516-1     Document Type: Article

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