Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETs

Solid-State Electronics

Volumn 41, Issue 8, 1997, Pages 1171-1176

  Lou, C L ^a   Chim, W K ^a   Chan, D S H ^a   Pan, Y ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GATES (TRANSISTOR); HOT CARRIERS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE; TUNGSTEN COMPOUNDS;

TUNGSTEN POLYCIDE GATE BURIED CHANNELS;

MOSFET DEVICES;

EID: 0031212686     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00044-0     Document Type: Article

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