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Volumn 18, Issue 2, 2000, Pages 937-941
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Calculation of the field emission current density from n-Si through injection in N-doped diamond
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT DENSITY;
CURRENT VOLTAGE CHARACTERISTICS;
DIAMOND FILMS;
DOPING (ADDITIVES);
ELECTRIC FIELDS;
ELECTRON EMISSION;
INTERFACES (MATERIALS);
MATHEMATICAL MODELS;
NITROGEN;
SEMICONDUCTING SILICON;
THERMAL EFFECTS;
FIELD ELECTRON EMISSION;
FIELD EMISSION CATHODES;
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EID: 0034156225
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.591302 Document Type: Article |
Times cited : (4)
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References (14)
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