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Volumn 18, Issue 2, 2000, Pages 937-941

Calculation of the field emission current density from n-Si through injection in N-doped diamond

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIAMOND FILMS; DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRON EMISSION; INTERFACES (MATERIALS); MATHEMATICAL MODELS; NITROGEN; SEMICONDUCTING SILICON; THERMAL EFFECTS;

EID: 0034156225     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591302     Document Type: Article
Times cited : (4)

References (14)
  • 2
    • 0342887047 scopus 로고    scopus 로고
    • edited by W. Zhu, L. S. Pan, T. E. Felter, and C. Holland Materials Research Society, Warrendale, PA
    • R. Matsuda, K. Okano, and B. B. Pate, in Materials Issues in Vacuum Microelectronics, edited by W. Zhu, L. S. Pan, T. E. Felter, and C. Holland (Materials Research Society, Warrendale, PA, 1998), p. 59.
    • (1998) Materials Issues in Vacuum Microelectronics , pp. 59
    • Matsuda, R.1    Okano, K.2    Pate, B.B.3
  • 13
    • 0343757756 scopus 로고    scopus 로고
    • edited by W. Zhu, L. S. Pan, T. E. Felter, and C. Holland Materials Research Society, Warrendale, PA
    • A. T. Sowers, B. L. Ward, and R. J. Nemanich, in Materials Issues in Vacuum Microelectronics, edited by W. Zhu, L. S. Pan, T. E. Felter, and C. Holland (Materials Research Society, Warrendale, PA, 1998), p. 95.
    • (1998) Materials Issues in Vacuum Microelectronics , pp. 95
    • Sowers, A.T.1    Ward, B.L.2    Nemanich, R.J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.