Laser infrared photothermal radiometry of electronic solids: principles and applications to industrial semiconductor Si wafers

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 2, 2000, Pages 705-708

  Mandelis, Andreas ^a   Riopel, Yan ^b  

^a UNIVERSITY OF TORONTO   (Canada)

^b Process Engineering   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DIFFUSION IN SOLIDS; ELECTROMAGNETIC WAVES; ELECTRON TRAPS; ELECTRONIC PROPERTIES; ENERGY GAP; ION IMPLANTATION; LASER APPLICATIONS; OXIDATION; PLASMAS; SOLIDS; THERMAL EFFECTS;

ELECTRONIC SOLIDS; LASER INFRARED PHOTOTHERMAL RADIOMETRY; PLASMA WAVE; SURFACE RECOMBINATION; THERMAL WAVE;

SILICON WAFERS;

EID: 0034156102     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582162     Document Type: Article

References (6)

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3. G. Busse and H. G. Walther, in Photothermal and Photoacoustic Science and Technology, edited by A. Mandelis (Elsevier, New York, 1992), Vol. 1, p. 205.
4. P. Salnick, C. Jean, and A. Mandelis, Solid-State Electron. 41, 591 (1997).
5. W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952); R. N. Hall, ibid. 87, 387 (1952).
6. W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952); R. N. Hall, ibid. 87, 387 (1952).