Temperature distribution over a GaAs heterojunction bipolar transistor measured by fluorescent microthermal imaging

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 2, 2000, Pages 754-756

  Boyer, N ^a   Oliver, B ^a   Hagley, A ^a   Masson, D P ^a   Simard Normandin, Martine ^a   Meunier, Michel ^b  

^a NORTEL NETWORKS   (Canada)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

INFRARED IMAGING; MICROSCOPIC EXAMINATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; TEMPERATURE DISTRIBUTION; TEMPERATURE MEASUREMENT;

FLUORESCENT MICROTHERMAL IMAGING; JUNCTION TEMPERATURE; LASER SCANNING MICROSCOPE; SURFACE TEMPERATURE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034156051     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582173     Document Type: Article

References (9)

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