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Volumn 18, Issue 2, 2000, Pages 1073-1076

Proposal and modeling of a novel thermal microprobe using n-Si/nitrogen doped diamond cathodes

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIODES; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; NITROGEN; SEMICONDUCTING DIAMONDS; SEMICONDUCTOR DEVICE MODELS; SILICA;

EID: 0034155544     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591331     Document Type: Article
Times cited : (2)

References (22)
  • 6
    • 0343321956 scopus 로고    scopus 로고
    • Proc. Of the 11th international vacuum microelectronics conference
    • 19-24 July 1998, Asheville, North Carolina, published
    • See selected articles from Proc. of the 11th International Vacuum Microelectronics Conference, 19-24 July 1998, Asheville, North Carolina, published in J. Vac. Sci. Technol. B 17, 659-740 (1999).
    • (1999) J. Vac. Sci. Technol. B , vol.17 , pp. 659-740
  • 15
    • 0342887058 scopus 로고    scopus 로고
    • Calculation of the field emission current density from n-Si through injection in n-doped diamond
    • Darmstadt, Germany, 6-9 July (unpublished)
    • V. Filip, D. Nicolaescu, F. Okuyama, and C. N. Plavitu, Calculation of the field emission current density from n-Si through injection in n-doped diamond, Proceedings of the 12th IVMC, Darmstadt, Germany, 6-9 July 1999 (unpublished).
    • (1999) Proceedings of the 12th IVMC
    • Filip, V.1    Nicolaescu, D.2    Okuyama, F.3    Plavitu, C.N.4
  • 16
    • 0343321957 scopus 로고    scopus 로고
    • Silicon-MicroDevices and Technologies (NT-MDT), information about silicon cantilevers available at the www address: http://www.siliconmdt.com/.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.