Gate voltage-dependent Aharanov-Bohm experiment in the presence of Rashba spin-orbit interaction

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 6, Issue 1, 2000, Pages 318-321

  Nitta, J ^a   Meijer, F ^a   Narita, Y ^a   Takayanagi, H ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON GAS; OSCILLATIONS; SPECTRUM ANALYSIS;

AHARONOV-BOHM OSCILLATIONS; RASHBA SPIN-ORBIT INTERACTION; TWO DIMENSIONAL ELECTRON GAS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0034138554     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00161-7     Document Type: Article

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