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Journal of Physics D: Applied Physics

Volumn 29, Issue 12, 1996, Pages 3101-3105

Identification of deep defects in high-resistivity undoped LEC-GaAs irradiated with protons

(1) Seghier, Djelloul a

a UNIVERSITY OF ICELAND (Iceland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY; IRRADIATION; LIGHTING; OHMIC CONTACTS; PROTONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

CONDUCTION BAND; ELECTRON TRAP; PHOTO INDUCED CURRENT TRANSIENT SPECTROSCOPY;

CRYSTAL DEFECTS;

EID: 0030399431 PISSN: 00223727 EISSN: None Source Type: Journal
DOI: 10.1088/0022-3727/29/12/024 Document Type: Article

Times cited : (4)

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