Fabrication of nitrogen-doped diamond field emitter utilizing porous silicon and molding technique

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 1 A/B, 2000, Pages

  Takida, Takayuki ^a   Inoue, Kouji ^b   Ri, Sung Gi ^a   Kimura, Hideki ^a   Kiyota, Hideo ^a   Saito, Ichiro ^b   Kurosu, Tateki ^a   Iida, Masamori ^a  

^a TOKAI UNIVERSITY   (Japan)

^b SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; MOLDING; NITROGEN; POROUS SILICON; SEMICONDUCTING DIAMONDS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

DIAMOND FIELD EMITTERS;

FIELD EMISSION CATHODES;

EID: 0033908959     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l56     Document Type: Article

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