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Volumn 439, Issue , 1997, Pages 575-580
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Radiation-induced segregation of metals at moving SiO 2-amorphous Si interfaces
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ION ASSISTED MIGRATION;
RADIATION-INDUCED SEGREGATION (RIS);
INTERFACES (MATERIALS);
ION BOMBARDMENT;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SECONDARY ION MASS SPECTROMETRY;
SEGREGATION (METALLOGRAPHY);
SILICA;
SILICON;
THERMAL EFFECTS;
GOLD;
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EID: 0030646498
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (1)
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References (11)
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