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Volumn 12, Issue 3, 2000, Pages 251-253

Dependence of the light-current characteristics of 1.55-μm broad-area lasers on different p-doping profiles

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; QUANTUM WELL LASERS; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS;

EID: 0033906224     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.826904     Document Type: Article
Times cited : (16)

References (8)
  • 2
    • 0024964172 scopus 로고
    • High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser dicdes emitting 1.5 μm
    • P. J. A. Thijs and T. van Dongen, "High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser dicdes emitting 1.5 μm," Electron. Lett., vol. 25, pp. 1735-1737, 1989.
    • (1989) Electron. Lett. , vol.25 , pp. 1735-1737
    • Thijs, P.J.A.1    Van Dongen, T.2
  • 3
    • 0344000090 scopus 로고
    • High power output 1.48-1.51 μm continuously graded index separate confinement strained quamtum well lasers
    • T. Tanbun-Ek, R. A. Logan, N. A. Olsson, A. M. Sargent, and K. W. Wecht, "High power output 1.48-1.51 μm continuously graded index separate confinement strained quamtum well lasers," Appl. Phys. Lett., vol. 57, pp. 224-226, 1990.
    • (1990) Appl. Phys. Lett. , vol.57 , pp. 224-226
    • Tanbun-Ek, T.1    Logan, R.A.2    Olsson, N.A.3    Sargent, A.M.4    Wecht, K.W.5
  • 4
    • 0033079927 scopus 로고    scopus 로고
    • High-temperature characteristics of 1.3-μm InAsP-InAlGaAs ridge waveguide lasers
    • M. Yamada, T. Anan, K. Tokutome, and S. Sugou, "High-temperature characteristics of 1.3-μm InAsP-InAlGaAs ridge waveguide lasers," IEEE Photon Technol. Lett., vol. 11, pp. 164-166, 1999.
    • (1999) IEEE Photon Technol. Lett. , vol.11 , pp. 164-166
    • Yamada, M.1    Anan, T.2    Tokutome, K.3    Sugou, S.4
  • 6
    • 0030219135 scopus 로고    scopus 로고
    • 1.5 μm wavelength, SCH-MQW InGaAsP/InP broadeded-waveguide laser diodes with low internal loss and high output power
    • D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J C. Connolly, "1.5 μm wavelength, SCH-MQW InGaAsP/InP broadeded-waveguide laser diodes with low internal loss and high output power," Electron. Lett., vol. 32, pp. 1717-1719, 1996.
    • (1996) Electron. Lett. , vol.32 , pp. 1717-1719
    • Garbuzov, D.1    Xu, L.2    Forrest, S.R.3    Menna, R.4    Martinelli, R.5    Connolly, J.C.6
  • 8
    • 0019532459 scopus 로고
    • Growth and characterization of 1.3 μm CW GaInAsP/InP lasers by liquid-phase epitaxy
    • W. W. Ng and P. D. Dapkus, "Growth and characterization of 1.3 μm CW GaInAsP/InP lasers by liquid-phase epitaxy." IEEE J. Quantum Electron., vol. QE-17, pp. 193-198, 1981.
    • (1981) IEEE J. Quantum Electron. , vol.QE-17 , pp. 193-198
    • Ng, W.W.1    Dapkus, P.D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.