Dependence of the light-current characteristics of 1.55-μm broad-area lasers on different p-doping profiles

IEEE Photonics Technology Letters

Volumn 12, Issue 3, 2000, Pages 251-253

  Han, I K ^a   Cho, S H ^a   Heim, P J S ^a   Woo, D H ^b   Kim, S H ^b   Song, J H ^a   Johnson, F G ^c   Dagenais, M ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b Korea Institute of Science and Technology   (South Korea)

^c LABORATORY FOR PHYSICAL SCIENCES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; QUANTUM WELL LASERS; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS;

BROAD-AREA LASERS; DELTA DOPING; ELECTRON LEAKAGE CURRENT;

INTEGRATED OPTOELECTRONICS;

EID: 0033906224     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.826904     Document Type: Article

References (8)

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