Optical investigation of InAs/InP quantum dots at different temperatures and under electric field

Thin Solid Films

Volumn 364, Issue 1, 2000, Pages 161-164

  Landin, L ^a   Borgstrom M ^a   Kleverman, M ^a   Pistol, M E ^a   Samuelson, L ^a   Seifert, W ^a   Zhang, X H ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC FIELD EFFECTS; ELECTRONIC STRUCTURE; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL EFFECTS;

INDIUM ARSENIDE; PHOTOCAPACITANCE; PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033905896     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00910-4     Document Type: Article

References (8)

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