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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. A, 1998, Pages 1939-1944

Role of the EL2 center on the formation of metastable hydrogen-related defects (M3/M4) in n-GaAs

(2) Shinagawa, Tatsuyuki a Okumura, Tsugunori a

a TOKYO METROPOLITAN UNIVERSITY (Japan)

Author keywords

Arsenic antisite; Defect metastability; EL2 center; GaAs; Hydrogen plasma; Hydrogen related defects; M3 M4 defects

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; ELECTRIC FIELD EFFECTS; HYDROGEN; PLASMAS; THERMAL EFFECTS;

METASTABILITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032049106 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.1939 Document Type: Article

Times cited : (8)

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