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Volumn 39, Issue 1, 2000, Pages 109-113
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Electrical and structural characterizations of Cu(InGa)Se2 thin films using electrochemical capacitance-voltage method and focused-ion beam process
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Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE;
CARRIER CONCENTRATION;
CHARACTERIZATION;
ELECTRIC POTENTIAL;
ELECTRIC PROPERTIES;
ELECTROCHEMISTRY;
FILM GROWTH;
ION BEAMS;
STRUCTURE (COMPOSITION);
CARRIER CONCENTRATION PROFILING;
COPPER INDIUM GALLIUM SELENIDE;
ELECTROCHEMICAL CAPACITANCE VOLTAGE METHOD;
FOCUSED ION BEAM PROCESS;
SELENIZATION;
THIN FILMS;
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EID: 0033901796
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.39.109 Document Type: Article |
Times cited : (7)
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References (8)
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