Investigation of the thermal stress field in a multilevel aluminium metallisation in VLSI systems

Microelectronics Reliability

Volumn 40, Issue 3, 2000, Pages 443-450

  Igic, P M ^a   Mawby, P A ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; METALLIZING; RESIDUAL STRESSES; STRESS ANALYSIS; THERMAL STRESS;

MULTILEVEL ALUMINUM METALLIZATION;

VLSI CIRCUITS;

EID: 0033896994     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00246-2     Document Type: Article

References (19)

1. Wada T, Higuchi H, Ajiki T. Analysis of corrosion on aluminum double-layer metallisation. Journal of Electrochemical Society 1986;133:362.
2. Ghate PB. Electromigration-induced failure in VLSI interconnects. Solid State Technologies 1983;3:113.
3. Sauter A, Flinn PA, Nix WD. Thermal stresses in aluminum lines bonded to substrate. IEEE Transactions on Components Hybrids, and Manufacturing Technology 1992;15:594.
4. Greenebaum B, Sauter A, Flinn PA, Nix WD. Stress in metal lines under passivation; comparison of experiment with finite element calculations. Applied Physics Letters 1991;58:1845.
5. Wada T. Barrier metal effect on electro and stress migration. IEICE Trans on Fundamentals 1994;E77-A:180.
6. Shen Y-L. Modeling of thermal stresses in metal interconnects: effects of line aspect ratio. Journal of Applied Physics 1997;82:1578.
7. ELFEN user's manual, Rockfield Software Ltd.
8. Jones RE, Basehore ML. Stress analysis of encapsulated fine-line aluminum interconnect. Applied Physics Letters 1987;50:725.
9. Cifuentes AO, Shareef IA. Modeling of multilevel structures: a general method for analyzing stress evolution during processing. IEEE Transaction on Semiconductor Manufacturing 1992;5:128.
10. Igic PM, Mawby PA. Finite element modelling of the thermal stress field during processing of VLSI multilevel structures. Electronics Letters 1998;34:471.
11. Niwa H, Yagi H, Tsuchikawa H, Kato M. Stress distribution in an aluminum interconnect of very large scale integration. Journal of Applied Physics 1990;68:328.
12. Lubliner J. Plasticity theory. New York: Macmillan, 1990.
13. Private conversation with D. Manic and R.S. Popovic.
14. Hosoda T, et al. Effect of line size on thermal stress in aluminium conductors. In: Proceedings of Reliability Physics Symposium. 1991. p. 77.
15. Mayumi S, et al. The effect of Cu addition to Al-Si interconnects on stress induced open-circuit failures. In: Proceedings of Reliability Physics Symposium. 1987. p. 15.
16. Information given by LG Semicon UK.
17. Igic PM, Mawby PA. Numerical modelling of stress-induced failure in sub-micron aluminium interconnects in VLSI systems. Solid State Electronics 1998;43:255.
18. Vinke H, Lasance CJM. Compact models for accurate thermal characterization of electronic parts. IEEE Transaction on Component Packaging, and Manufacturing Technology - Part A 1997;20:411.
19. Hill R. The mathematical theory of plasticity. London: Oxford University Press, 1971.