Novel technique for measuring etch rate distribution of Si

Sensors and Actuators, A: Physical

Volumn 79, Issue 2, 2000, Pages 136-140

  Yang, Heng ^a   Bao, Minhang ^a   Shen, Shaoqun ^a   Li, Xinxin ^a   Zhang, Dacheng ^b   Wu, Guoyin ^b  

^a FUDAN UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; MICROSCOPES; POTASSIUM COMPOUNDS; REACTIVE ION ETCHING; SILICON WAFERS;

ANISOTROPIC ETCHING; ETCH RATE DISTRIBUTION;

SILICON SENSORS;

EID: 0033895794     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(99)00270-8     Document Type: Article

References (8)

1. Sequin C.H. Computer simulation of anisotropic crystal etching. Sens. Actuators A. 34:1992;225-241.
2. A. Koide, K. Sato, S. Tanaka, Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etching, Proc. IEEE Micro Electro Mechanical Systems (MEMS) Workshop, Nara, Japan, 1991, pp. 216-220.
3. Zielke D., Fruhauf J. Determination of rates for orientation-dependent etching. Sens. Actuators A. 48:1995;151-156.
4. Sato K., Shikida M., Matsushima Y., Yamashiro T., Asaumi K., Iriye Y., Yamamoto M. Characterization of orientation-dependent etching properties of single-crystal silicon: effects of KOH concentration. Sens. Actuators A. 64:1998;87-93.
5. Bao M., Li X., Shen S., Chen H. A novel micromachining technology for multilevel structures of silicon. Sens. Actuators A. 63:1997;217-221.
6. X. Li, H. Yang, M. Bao, 〈100〉 masked-maskless etch technology for composite-beam structure, Proc. 10th Int. Conf. Solid-State Sensors and Actuators (Transducers '99), Sendai, Japan, June 7-10, 1999, 2P2.23.
7. J.K. Bhardwaj, H. Ashraf, Advanced silicon etching using high density plasmas, Proc. Micromachining and Microfabrication Process Technology Symposium of International Society for Optical Engineering, Austin, TX, USA, 1995, pp. 224-233.
8. Seidel H., Csepregi L., Heuberger A., Baumgartel H. Anisotropic etching of crystalline silicon in alkaline solutions. J. Electrochem. Soc. 137(11):1990;3612-3626.