Thermally stimulated capacitance in porous silicon diodes

Physics of the Solid State

Volumn 38, Issue 3, 1996, Pages 388-392

  Astrova, E V ^a   Belov, S V ^a   Lebedev, A A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

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[No Author keywords available]

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EID: 0030531873     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (22)

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