In situ measurement of porous silicon and the influence of ambient gas on its properties

Sensors and Actuators, A: Physical

Volumn 79, Issue 2, 2000, Pages 147-152

  Bilenko, D I ^a   Belobrovaja, O Y ^a   Coldobanova, O Y ^a   Jarkova, E A ^a   Khasina, E I ^a   Polyanskaya, V P ^a   Melnikova, T E ^a   Mysenko, I B ^a   Smirnov, V V ^a   Filippova, G O ^a  

^a SARATOV STATE UNIVERSITY   (Russian Federation)

Author keywords

In situ measurement; Low dimensional silicon structures; Porous silicon

Indexed keywords

ALUMINUM; CATALYSTS; CHEMICAL SENSORS; ELECTRIC CURRENTS; ELECTRODES; HYDROGEN SULFIDE; LIGHT REFLECTION; NICKEL; NITROGEN; OPTICAL SENSORS; PALLADIUM; POROUS SILICON;

CATALYTIC ELECTRODES; OHMIC ELECTRODES;

SILICON SENSORS;

EID: 0033895626     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(99)00276-9     Document Type: Article

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